- SK Hynix’s 321-layer NAND targets AI-driven information storage wants
- 321-layer NAND flash improves information switch velocity by 12%
- AI storage calls for drive innovation in high-capacity NAND options
Samsung and SK Hynix have continued their head-to-head battle within the NAND flash reminiscence market with the latter taking the lead with a brand new launch.
SK Hynix, the world’s second-largest reminiscence chipmaker, not too long ago grew to become the primary to mass-produce triple-level cell (TLC) NAND flash with over 300 layers.
The corporate’s new 321-layer, 1-terabit TLC 4D NAND flash, introduced not too long ago, is about to revolutionize the information storage trade, paving the way in which for extra inexpensive ultra-high-capacity solid-state drives (SSDs) that exceed 100TB in capability.
SK Hynix 321-layer NAND
The NAND trade is racing to push the bounds of knowledge storage expertise, and SK Hynix’s achievement is a significant milestone.
After the launch of its 238-layer NAND flash final 12 months, SK Hynix’s newest 321-layer NAND flash units a brand new trade customary. The corporate plans to produce these chips to prospects beginning within the first half of 2025, focusing on the booming synthetic intelligence (AI) market, which calls for high-performance, energy-efficient storage options.
The 321-layer NAND was made attainable by SK Hynix’s “Three Plugs” course of expertise, which entails electrically connecting three plugs by means of an optimized follow-up step, considerably bettering the velocity, energy effectivity, and total efficiency of the chips.
SK Hynix additionally developed a low-stress materials and launched expertise that robotically corrects alignment among the many plugs to additional optimize the manufacturing course of.
The 321-layer product affords a 12% improve in information switch velocity and a 13% enchancment in studying efficiency relative to the earlier 238-layer NAND. Moreover, it reduces energy consumption by over 10%. With a 59% enhance in productiveness, SK Hynix’s new NAND affords an enhanced storage answer for AI information facilities and on-device AI purposes.
Whereas SK Hynix has achieved this historic feat, its fundamental competitor, Samsung, isn’t far behind. Samsung is reportedly engaged on a 400-layer NAND flash chip, which it plans to launch by 2026.
The corporate’s roadmap consists of creating bonding vertical NAND (BV NAND) expertise, which is able to enable for even higher storage density and minimized warmth buildup. Samsung’s long-term aim is to introduce NAND chips with over 1,000 layers by 2030, probably breaking the 200TB storage barrier for AI-driven SSDs.
“SK Hynix is on monitor to advancing to the Full Stack Al Reminiscence Supplier by including an ideal portfolio within the ultra-high efficiency NAND house on prime of the DRAM enterprise led by HBM,” famous Jungdal Choi, Head of NAND Growth at SK Hynix.
By way of KEDGlobal